qsyxcn的博客

FPGA K7核心板原理图，非常不错的资料

Class E论文，非常经典，值得一看。 Abstract — This paper describes the design and fabrication of a highly efficient switching-mode Class-E Doherty power amplifier using gallium nitride (GaN) highelectron mobility transistor (HEMT) for S-band radar applications. Measured results of the Doherty amplifier show power-added efficiency (PAE) and drain efficiency of 62.6% and 73.1% at 37 dBm of 6 dB output back-off point from saturated output power at 2.85 GHz, compared with PAE and drain efficiency of 42.9% and 44.7% for the case of balanced amplifier. It was found that PAE was improved by 19.7% by adopting the Doherty efficiency enhancement technique.

国外机器学校教程， Introduction, Regression Analysis, and Gradient Descent

STM32F103ZET6 PCB和原理图封装

红牛开发板光盘\实验例程\红牛部分测试程序(新)\红牛开发板 NAND和SD卡(SDIO)模拟U盘程序for_128M

红牛开发板光盘\实验例程\红牛部分测试程序(新)\SD_FAT(for 红牛).rar