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The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.

High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free

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